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| PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-cha nn el Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 49 27 200 200 15 200 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 0.77 1.7 -----40 ------ Units C/W g (oz) www.irf.com 1 12/30/00 IRG4PC40FD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance T 9.2 Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.70 ---- V/C 1.50 1.7 1.85 ---V 1.56 ------- 6.0 -12 ---- mV/C 12 ---S ---- 250 A ---- 3500 1.3 1.7 V 1.2 1.6 ---- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 27A VGE = 15V IC = 49A See Fig. 2, 5 IC = 27A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 27A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 15A See Fig. 13 IC = 15A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 100 15 35 63 32 230 170 0.95 2.01 2.96 63 33 350 310 4.7 13 2200 140 29 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 150 IC = 27A 23 nC VCC = 400V See Fig. 8 53 VGE = 15V ---TJ = 25C ---ns IC = 27A, VCC = 480V 350 VGE = 15V, RG = 10 250 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 4.0 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 10 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 15A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 VR = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17 2 www.irf.com IRG4PC40FD 40 30 Load Current (A) Duty c ycle: 5 0% TJ = 1 25C Tsink = 90C G ate driv e as spe cified Turn-o n losse s include effe cts of rev erse reco very P ow er D issipation = 35W 20 6 0 % o f ra te d v olta g e 10 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 (A) IC , Collector-to-Emitter Current T J = 25C 100 I C , Collector-to-Emitter Current (A) 100 T J = 150C TJ = 15 0C 10 10 T J = 25C 1 1 V G E = 15V 20s PU LSE W ID TH A 10 1 5 6 7 8 V C C = 50V 5s PULSE WIDTH A 9 10 11 12 VCE , Collec tor-to-Em itter V oltage (V ) VG E , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40FD 50 V C E , Collector-to-Emitter Voltage (V) V G E = 15 V 2.5 V G E = 15V 80s PULSE WIDTH I C = 54A M axim um D C C ollector C urrent (A ) 40 2.0 30 20 I C = 27A 1.5 10 I C = 14A 1.0 0 25 50 75 100 125 150 A -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al Response (Z th JC ) D = 0 .5 0 0.2 0 0 .1 0.1 0 0 .05 SIN G LE P UL SE (T H ER M A L R E SP O NS E ) N o te s: 1 . D u ty fa c to r D = t 1 / t2 PD M t 1 t2 0.0 2 0.0 1 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40FD 4000 VGE = 0V f = 1 MHz 20 C , Capacitance ( pF) Coes = Cce + Cgc 3000 V G E , Gate-to-Emitter Voltage (V) Cies = Cge + Cgc + Cce Cres = Cce SHORTED VC E = 400V I C = 27A 16 C ies 2000 12 8 1000 C oe s C res 4 0 1 10 A 100 0 0 20 40 60 80 100 A 120 VC E , Collector-to-Emitter Voltage (V) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.3 Total Switchig Losses (mJ) Total Switchig Losses (mJ) VC C VG E TJ IC = 480V = 15V = 25C = 27A 100 R G = 10 V G E = 15V V C C = 480V 3.2 10 I C = 54A I C = 27A I C = 14A 3.1 1 3.0 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40FD 12 10 I C , C ollecto r-to-Emitte r C urre nt (A) Total Switchig Losses (mJ) RG TJ V CC V GE = = = = 10 150C 480V 15V 1000 VG E E 2 0V G= T J = 125 C 8 100 S A F E O P E R A TIN G A R E A 6 4 10 2 0 0 10 20 30 40 50 60 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantan eous Forward C urren t - I F (A ) 10 TJ = 15 0 C TJ = 12 5 C TJ = 2 5 C 1 0.8 1.2 1.6 2.0 2.4 Fo rwa rd V o ltag e Drop - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC40FD 100 100 V R = 200V T J = 125C T J = 25C 80 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C I F = 3 0A I F = 30A 60 I IR R M - (A ) t rr - (ns) 10 I F = 15 A I F = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/s) 1000 1 100 1000 d i f /d t - (A / s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 800 1000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 600 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C I F = 3 0A di(rec)M /d t - (A /s) Q R R - (nC ) 400 I F = 5 .0A I F = 1 5A I F = 30 A I F = 15 A I F = 5 .0A 200 0 100 d i f /d t - (A / s) 1000 100 100 1000 di f /dt - (A /s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC40FD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430F D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = t1 + 5 S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC40FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC40FD Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 10 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. Notes: Case Outline TO-247AC 3 .6 5 ( .1 4 3 ) 3 .5 5 ( .1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N OTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2X 5 .5 0 (.2 1 7 ) 4 .5 0 (.1 7 7 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE C OLLE C TO R E M IT T E R C OLLE C TO R * 1 4 .80 ( .58 3) 1 4 .20 ( .55 9) 4.3 0 (.1 70) 3.7 0 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 (.1 0 2 ) 2 .2 0 (.0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.21 5) L O N G E R L E A D E D (2 0 m m ) V E R S IO N A V A IL A B L E (T O -2 4 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s io n s in M illim ete rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com |
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